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Product Detailed Parameters
- Description：MOSFET P-CH 20V 630MA SOT323-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：630mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：550mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 3.5µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：115 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS209PWH6327XTSA1 is a P-Channel OptiMOS-P small-signal transistor in an SOT-323 package. It features a drain-source voltage of -20 V and a continuous drain current of -0.63 A at 25 °C. The device has a maximum on-state resistance of 550 mΩ at VGS = -4.5 V and 900 mΩ at VGS = -2.5 V. It supports a junction temperature up to 150 °C, operates within -55 °C to +150 °C, and includes avalanche and dv/dt ratings.
Feature Summary
- Enhancement mode P-Channel construction with Super Logic level capability for 2.5 V operation
- Avalanche rated and dv/dt rated for robust switching performance
- Qualified according to AEC-Q101 standards
- RoHS compliant and halogen-free
Applications
- Low-side load switching applications
- Power management circuits requiring logic-level drive
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details such as tape and reel quantities. Ensure that the component meets all required automotive qualification standards if deployed in vehicle electronics. Cross-reference the datasheet revision to confirm thermal and electrical characteristics match the intended design specifications.
Selection Notes
Select this component for designs requiring a P-Channel MOSFET with low gate threshold voltage suitable for 2.5 V logic interfaces. Consider its avalanche rating for inductive load protection. Evaluate the thermal resistance values relative to the PCB footprint and cooling area requirements to ensure safe operating temperatures under continuous load conditions.
Part Context
This part belongs to the OptiMOS-P family of small-signal transistors from Infineon Technologies. These devices are designed for efficient power switching in compact surface-mount packages. The series emphasizes low on-resistance and fast switching speeds while maintaining high reliability for industrial and automotive environments.
Replacement Considerations
Check for direct substitutes within the BSS209PW series or other P-Channel MOSFETs with compatible -20 V ratings and similar RDS(on) characteristics. Verify pinout compatibility and package dimensions before substitution.
