ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 20V 1.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：140mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The BSS214NH6327XTSA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 2 series, housed in a PG-SOT23 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 1.5 A at 25 °C. The device has a maximum on-state resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V. It supports a pulsed drain current of 6 A and includes avalanche rating capabilities with single pulse energy up to 3.7 mJ. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- Super Logic level operation rated for 2.5 V gate drive
- Avalanche rated for robustness against transient overvoltage events
- Qualified according to AEC-Q101 automotive standards
Applications
- Low-side switching applications
- Load switching circuits
- General-purpose small-signal transistor tasks
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 matches the required packaging format, as it indicates tape and reel quantities. Confirm that the component meets RoHS compliance and halogen-free requirements per IEC61249-2-21 standards. Ensure the procurement channel provides valid traceability documentation for the AEC-Q101 qualification status.
Selection Notes
Select this component when a low-voltage N-channel switch requires logic-level compatibility at 2.5 V or 4.5 V. The PG-SOT23 package suits space-constrained surface-mount designs. Consider its avalanche capability if the circuit environment presents potential inductive load transients requiring internal clamping.
Part Context
This part belongs to the BSS214N family within Infineon's OptiMOS 2 portfolio. It is designed as a small-signal transistor optimized for efficiency and fast switching speeds. The technology utilizes silicon planar gate field-stop structures to achieve low on-resistance in a compact footprint.
Replacement Considerations
Direct substitutes include other N-channel MOSFETs in SOT-23 packages with similar 20 V ratings and comparable RDS(on) values. Verify pinout compatibility and thermal resistance characteristics before substitution.
