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Product Detailed Parameters
- Description：MOSFET N-CH 20V 1.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：140mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：143 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS214NL6327HTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ 2 family, housed in a PG-SOT23 surface-mount package. It features a drain-source breakdown voltage of 20 V and supports continuous drain currents up to 1.5 A at 25 °C. The device exhibits a maximum on-state resistance of 140 mΩ at VGS=4.5 V and 250 mΩ at VGS=2.5 V. Key dynamic parameters include a total gate charge of 0.8 nC and a reverse recovery time of 8.4 ns for the integrated body diode. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Super Logic level capability rated for 2.5 V operation
- Avalanche energy rated for robust transient handling
- Qualified according to AEC-Q101 automotive standards
- Halogen-free construction compliant with IEC61249-2-21
Applications
- Automotive electronic control units
- Low-side switching applications
- Power management circuits requiring logic-level drive
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging details and lead-free status. Ensure compatibility with standard SMD reflow soldering profiles not exceeding 260 °C. Confirm that the component meets RoHS directives and halogen-free requirements as specified in the datasheet before finalizing procurement specifications.
Selection Notes
Select this component when a small-signal N-channel MOSFET with low gate charge and high transconductance is required. The 2.5 V logic level rating makes it suitable for direct interfacing with low-voltage microcontrollers or digital logic outputs. Consider the thermal resistance characteristics and safe operating area limits for high-current pulsed applications.
Part Context
This part belongs to the BSS214N series of OptiMOS™ 2 small-signal transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching applications where compact size and efficient performance are critical. The PG-SOT23 package provides a cost-effective solution for space-constrained printed circuit board layouts.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may differ in avalanche ratings, thermal resistance, or automotive qualification status.
