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Product Detailed Parameters
- Description：MOSFET P-CH 20V 390MA SOT323-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：390mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs：0.62 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS223PWH6327XTSA1 is a P-Channel OptiMOS-P small-signal transistor in a PG-SOT-323 package. It features a drain-source breakdown voltage of -20 V and a continuous drain current of -0.39 A at 25°C. The device has a maximum on-state resistance of 1.2 Ω at VGS=-4.5 V and 2.1 Ω at VGS=-2.5 V. It supports an operating temperature range from -55°C to +150°C, includes avalanche rating capabilities, and is qualified according to AEC-Q101 standards.
Feature Summary
- Super Logic Level operation rated for 2.5 V gate drive
- Avalanche energy rated for robust switching performance
- Reverse diode dv/dt rated for high-speed commutation
- Halogen-free construction compliant with IEC61249-2-21
Applications
- Low-side load switching applications
- Power management circuits requiring logic-level control
- Battery protection systems
- Automotive electronic modules
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and RoHS compliance status. Ensure that the component meets the required AEC-Q101 qualification standards for your specific automotive or industrial application environment before finalizing procurement.
Selection Notes
Select this component when a P-Channel MOSFET with low gate threshold voltage is required for direct logic interface. The device is suitable for applications needing avalanche ruggedness and high reverse diode dv/dt ratings. Consider the thermal resistance limits and power dissipation constraints relative to the ambient operating temperature conditions.
Part Context
This part belongs to the Infineon OptiMOS-P family of small-signal transistors. It utilizes silicon technology to provide enhanced switching performance in a compact surface-mount package. The series is designed for efficient power control in space-constrained electronic designs.
Replacement Considerations
Check for BSS223PW variants with different packaging options if reel quantities differ. Verify pinout compatibility and electrical parameter overlaps with other P-Channel SOT-323 devices from Infineon or alternative manufacturers.
