BSS308PEH6327XTSA1

$0.37

Description：MOSFET P-CH 30V 2A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:39b167e1cdd8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs：5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS308PEH6327XTSA1

Overview

The BSS308PEH6327XTSA1 is a P-channel enhancement mode MOSFET from the OptiMOS P3 series. It features a PG-SOT-23 package with three terminals. The device supports a drain-source voltage of -30 V and a continuous drain current of -2.0 A at 25 °C. The maximum on-state resistance is 80 mΩ at Vgs=-10 V and 130 mΩ at Vgs=-4.5 V. It operates within a temperature range of -55 °C to 150 °C, dissipates up to 0.5 W, and includes an integrated reverse diode.

Feature Summary

Logic level operation rated for 4.5 V gate drive
ESD protection compliant with JESD22-A114 HBM Class 2
Automotive qualification according to AEC-Q101 standards

Applications

Battery management systems
Home appliance control circuits
Small signal switching applications

Procurement Notes

Verify component authenticity by checking the marking code YFs against official Infineon documentation. Confirm the specific ordering suffix H6327XTSA1 matches the required tape and reel packaging configuration. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet before finalizing procurement orders.

Selection Notes

Select this component when a compact P-channel switch is required for low-voltage logic interfaces. The 4.5 V rating allows direct driving from standard logic levels. Consider the thermal resistance of 250 K/W for heat dissipation calculations. Verify that the -30 V breakdown voltage meets the circuit's maximum operating conditions.

Part Context

This part belongs to the OptiMOS P3 small-signal transistor family designed for efficient switching. It utilizes silicon technology and is housed in a surface-mount PG-SOT-23 package. The product is lead-free, RoHS compliant, and halogen-free according to IEC61249-2-21 standards.