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Product Detailed Parameters
- Description：MOSFET P-CH 30V 1.5A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：2.3 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：282 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS315PH6327XTSA1 is a P-channel OptiMOS-P 2 small-signal transistor manufactured by Infineon Technologies. It operates in enhancement mode and is logic-level rated for 4.5V applications. The device features a PG-SOT-23 package with a continuous drain current of -1.5 A at 25°C and a pulsed drain current of -6 A. Key electrical parameters include a drain-source breakdown voltage (VDS) of 30 V, a maximum on-state resistance (RDS(on)) of 150 mΩ at VGS=-10 V, and a gate threshold voltage (VGS(th)) ranging from -1.0 V to -2.0 V. It supports an operating temperature range of -55°C to +150°C.
Feature Summary
- Avalanche rated capability for robust operation under transient conditions
- Qualified according to AEC-Q101 automotive standards
- Logic level design optimized for 4.5V drive requirements
- Halogen-free construction compliant with AECQ101-2-21
Applications
- Automotive electronic systems requiring AEC-Q101 qualified components
- Low-side switching applications in power management circuits
- General-purpose signal switching in consumer electronics
- Load switching in industrial control modules
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a P-channel MOSFET with avalanche rating and automotive qualification is required. Consider the 150 mΩ RDS(on) at VGS=-10 V for efficiency needs. Evaluate the thermal resistance and power dissipation limits relative to the application's ambient temperature constraints. Confirm compatibility with 4.5V logic levels if driving directly from microcontrollers or standard logic gates.
Part Context
This part belongs to the BSS315P series of OptiMOS-P 2 transistors. It is designed for high-efficiency switching in compact surface-mount packages. The series emphasizes low on-resistance and fast switching speeds suitable for modern power management architectures. It represents Infineon's silicon-based solution for small-signal power applications.
Replacement Considerations
Direct substitutes within the same family include BSS314PEH6327XTSA1. Verify pinout compatibility and electrical parameter margins before substitution. Ensure any replacement maintains the required AEC-Q101 qualification and package type.
