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Product Detailed Parameters
- Description：NCH 60V 650MA, SOT-23, SMALL SIG
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：680mOhm @ 650mA, 10V
- Vgs(th) (Max) @ Id：2V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SST3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS670AHZGT116 is an N-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 650 mA at ambient temperature. The device utilizes SOT-23 surface-mount packaging with three pins. Key electrical characteristics include a maximum power dissipation of 200 mW and a gate threshold voltage designed for ultra-low voltage drive applications, specifically supporting 2.5 V drive levels. The component is qualified under AEC-Q101 standards for automotive reliability.
Feature Summary
- Designed for high-speed switching applications with very fast switching capabilities
- Supports ultra-low voltage drive operations at 2.5 V
- Includes electrostatic discharge (ESD) protection rated up to 2 kV using the Human Body Model (HBM)
- Automotive grade qualification compliant with AEC-Q101 standards
Applications
- High-speed switching circuits in automotive electronics
- Low voltage drive logic interfaces
- General purpose small signal amplification
Procurement Notes
Verify the specific suffix GT116 corresponds to the required tape and reel quantity or cut tape format as defined in the official ROHM datasheet. Confirm AEC-Q101 compliance requirements match your system specifications. Ensure the SOT-23-3 footprint matches your PCB layout constraints. Check for RoHS and halogen-free status if environmental regulations apply to your assembly process.
Selection Notes
Select this component when a 60 V N-channel MOSFET with 650 mA capability is required in a compact SOT-23 package. It is suitable for designs needing fast switching speeds and low gate drive voltages around 2.5 V. Consider the 200 mW power dissipation limit for thermal management. Verify that the ESD protection level meets the handling requirements of your application environment.
Part Context
This part belongs to the ROHM BSS series of small signal MOSFETs for automotive use. These devices are engineered for reliability in harsh environments. The BSS670 variant specifically targets applications requiring moderate current handling with high switching efficiency. The series is characterized by its compatibility with standard surface mount assembly processes.
Replacement Considerations
Consult official ROHM documentation for direct cross-references. Generic replacements must match the 60 V rating, 650 mA current capacity, SOT-23 package, and N-channel configuration. Verify switching speed and gate charge parameters to ensure functional equivalence in high-speed circuits.
