ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 540MA SOT23
- Series：*
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The BSS670S2LH6433XTMA1 is an N-Channel enhancement mode MOSFET from the OptiMOS Buck converter series. It features a 55 V drain-source breakdown voltage and a continuous drain current of 0.54 A at 25°C. The device offers a maximum on-state resistance of 825 mΩ at VGS=4.5V and 650 mΩ at VGS=10V. Packaged in PG-SOT23, it supports a junction temperature range of -55°C to +150°C and includes avalanche energy ratings.
Feature Summary
- Logic-level gate drive capability for direct interface with standard logic circuits
- Avalanche-rated construction supporting single-pulse energy handling
- Halogen-free manufacturing compliant with IEC61249-2-21 standards
Applications
- Buck converter power stages
- Low-side switching applications
- General-purpose power control
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package type and reel quantity. Confirm component status as End-of-Life or Not Recommended for New Designs before finalizing procurement plans. Ensure compatibility with existing PCB footprints and thermal management requirements.
Selection Notes
Select this component for low-current switching applications requiring high reliability and compact packaging. Evaluate the thermal resistance characteristics relative to the intended PCB copper area. Consider the logic-level threshold voltage when designing the gate drive circuitry for optimal efficiency.
Part Context
This part belongs to the BSS670S2 family of OptiMOS technology. It utilizes silicon planar trench gate technology designed for high power density. The PG-SOT23 package provides a small footprint suitable for space-constrained designs while maintaining robust electrical performance.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering generic replacements.
