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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS7728NH6327XTSA1 is an N-channel enhancement mode logic level MOSFET in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a maximum continuous drain current of 0.2 A at 25°C. The device exhibits a typical on-state resistance of 4.3 Ω at VGS=4.5V and 2.7 Ω at VGS=10V. It supports a reverse diode dv/dt rating of 6 kV/µs, operates within a junction temperature range of -55°C to +150°C, and is qualified according to AEC-Q101 standards.
Feature Summary
- Enhancement mode operation with logic-level gate drive compatibility
- High-speed switching capability with a rated reverse diode dv/dt of 6 kV/µs
- Automotive-grade reliability certified under the AEC-Q101 standard
Applications
- Low-power DC motor control circuits
- Load switching for automotive electronic modules
- General-purpose power management applications
Procurement Notes
Verify the specific ordering suffix H6327XTSA1 to confirm the tape and reel packaging quantity of 3000 pieces per reel. Ensure that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the full part number against official Infineon databases to validate current production status and availability before finalizing procurement plans.
Selection Notes
Select this component when a small-signal N-channel MOSFET with 60 V blocking capability is required. The low gate threshold voltage facilitates direct interfacing with standard logic controllers. Consider the thermal resistance characteristics and the 0.2 A continuous current limit to ensure adequate heat dissipation within the PG-SOT-23 footprint constraints.
Part Context
This device belongs to the SIPMOS small-signal transistor family from Infineon Technologies. It utilizes planar trench technology optimized for low on-resistance and fast switching performance. The component is designed for surface-mount assembly, providing a compact solution for space-constrained electronic designs requiring reliable semiconductor switching capabilities.
Replacement Considerations
Consult official Infineon documentation for verified cross-references. No public substitute part numbers are confirmed in the provided source material.
