BSS7728NL6327HTSA1

Overview

The BSS7728NL6327HTSA1 is an N-channel enhancement mode MOSFET from the SIPMOS family, housed in a PG-SOT-23 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 0.2 A at 25°C. The device has a maximum on-state resistance of 5 Ω at VGS=10V and 7.5 Ω at VGS=4.5V. It supports a power dissipation of 0.36 W and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Logic level gate drive capability for direct interface with standard logic circuits
• High dv/dt rating suitable for fast switching applications
• Enhancement mode operation with low gate charge characteristics

Applications

• Low-side switching in battery-powered devices
• Load control in automotive electronics
• General purpose small-signal transistor applications

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code 'SK' on the SOT-23 package. Confirm the ordering suffix L6327 corresponds to the specified tape and reel quantity of 3000 pieces per reel. Ensure the datasheet revision matches the technical specifications required for your design implementation.

Selection Notes

Select this component when a compact N-channel MOSFET with 60V blocking capability is needed. The logic level threshold allows efficient driving from low voltage logic sources. Consider the thermal resistance and derating curves if operating at elevated ambient temperatures or high duty cycles.

Part Context

This part belongs to Infineon's SIPMOS small-signal transistor series. It utilizes silicon planar technology optimized for low on-resistance and robust performance in surface-mount designs. The PG-SOT-23 package provides a compact footprint for space-constrained PCB layouts.

Replacement Considerations

Check for pin-compatible alternatives within the same SIPMOS family that offer lower RDS(on) or higher current ratings. Verify that any substitute maintains the 60V VDS rating and fits the PG-SOT-23 package constraints.