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Product Detailed Parameters
- Description：MOSFET N-CH 20V 1.4A SOT323-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
- Rds On (Max) @ Id, Vgs：160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id：750mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 2.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：180 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT323
- Package / Case：SC-70, SOT-323
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Overview
The BSS816NWH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™2 series, manufactured by Infineon Technologies. It operates with a drain-source voltage of 20 V and supports a continuous drain current of 1.4 A at 25 °C. The device features an ultra-low logic-level gate threshold voltage rated for 1.8 V operation. Key electrical parameters include a maximum on-state resistance of 160 mΩ at VGS=2.5 V and 240 mΩ at VGS=1.8 V. It is housed in a PG-SOT323 surface-mount package.
Feature Summary
- Ultra Logic level capability enabling direct drive from 1.8 V logic sources
- Avalanche rated design supporting single-pulse energy absorption
- Qualified according to AEC-Q101 automotive standards
Applications
- Low-side switching applications in automotive electronics
- General-purpose power management circuits
- Load switching in portable devices requiring small footprints
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix H6327 corresponds to the specified tape and reel packaging configuration. Ensure compliance with RoHS and halogen-free requirements as documented in the datasheet specifications before finalizing procurement orders.
Selection Notes
Select this component when low gate drive voltage compatibility is required alongside high current handling capabilities. The SOT-323 package suits space-constrained designs. Evaluate thermal performance based on the specific PCB footprint area, as thermal resistance varies significantly between minimal and standard mounting configurations.
Part Context
This part belongs to the BSS816NW family of OptiMOS™2 small-signal transistors. It represents Infineon's silicon-based enhancement mode technology optimized for low-voltage switching efficiency. The product line focuses on reducing conduction losses while maintaining robust avalanche characteristics for industrial and automotive environments.
Replacement Considerations
Consult official replacement lists for verified substitutes. Generic cross-references may not match the specific avalanche rating or AEC-Q101 qualification status.
