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Product Detailed Parameters
- Description：BSS83IXUSA1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BSS83IXUSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies using silicon technology. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 550 mA. The device exhibits a maximum on-resistance of 1.7 Ohms at specified gate-source voltages, with a gate-source voltage rating of 20 V. Key switching parameters include a gate charge of 870 pC, a rise time of 2.6 ns, and a fall time of 32.3 ns. It operates within a temperature range of -55 C to +150 C, with a power dissipation capacity of 1.04 W.
Feature Summary
- Single-channel P-Channel configuration for efficient high-side switching applications
- Enhancement mode operation with low threshold voltage for logic-level compatibility
- High thermal stability supporting extended operating temperatures up to 150 C
Applications
- Small signal switching circuits requiring compact surface-mount integration
- Low-power load management in consumer electronics
- Battery protection and control systems utilizing P-Channel topology
Procurement Notes
Verify the specific ordering suffix and package variant against official Infineon documentation before procurement. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the supplier provides valid traceability documents matching the manufacturer part number. Cross-reference the datasheet revision date to guarantee parameter accuracy for your design specifications.
Selection Notes
Select this component when a P-Channel MOSFET with 60 V capability and moderate current handling is required. Compare the 1.7 Ohm on-resistance against circuit loss tolerances. Evaluate the 550 mA continuous current limit against peak load demands. Consider the small-signal package constraints for PCB layout density and thermal management needs relative to the 1.04 W dissipation rating.
Part Context
This device belongs to Infineon's small-signal MOSFET portfolio, designed for general-purpose switching tasks. It utilizes standard silicon planar technology optimized for cost-effective mass production. The component serves as a fundamental building block for low-voltage power control applications across various industrial and consumer sectors.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the P-Channel polarity, 60 V rating, and compatible pinout configuration.
