BSS84

$0.11

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：EVVO
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0cca0dcfa597 Category: Single FETs, MOSFETs Brand: EVVO

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：EVVO
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BSS84

Overview

The EVVO BSS84 is a P-Channel MOSFET housed in a SOT-23 surface-mount package. It features a drain-source voltage of -50 V, a continuous drain current of -0.13 A, and a power dissipation of 225 mW. The device includes ESD protection up to 2 kV (HBM) and operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Energy-efficient design with low threshold voltage for effective switching performance
Miniature SOT-23 package optimized for board space conservation
Integrated electrostatic discharge protection rated up to 2 kV (HBM)

Applications

High-side load switching circuits
Relay driver applications
General-purpose switching circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm pinout orientation and packaging configuration. Ensure the component meets required thermal management standards for the intended application environment. Confirm RoHS compliance status through manufacturer datasheets prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring compact P-Channel MOSFET solutions with moderate current handling capabilities. Evaluate thermal resistance characteristics relative to PCB copper area constraints. Consider gate threshold voltage specifications to ensure compatibility with available logic drive levels for reliable turn-on operation.

Part Context

This component belongs to the discrete semiconductor category, specifically functioning as a field-effect transistor. It serves as a fundamental building block for power management and signal switching tasks within electronic systems, providing efficient control over DC loads in compact form factors.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference absolute maximum ratings and electrical parameters to ensure functional equivalence without compromising circuit reliability or safety margins.