BSS84-PD

$0.06

Description：MOSFET P-CH -60V -0.17A SOT23
Series：BSS
Mfr：NextGen Components
Package：Tape & Reel (TR)

SKU:5fd371cfb9a9 Category: Single FETs, MOSFETs Brand: NextGen Components

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH -60V -0.17A SOT23
Series：BSS
Mfr：NextGen Components
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：170mA
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.77 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：SOT-23-3

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BSS84-PD

Overview

The BSS84-PD is a -60V P-Channel Enhancement Mode MOSFET from the BSS series, housed in a SOT-23 surface mount package. It features Trench Power LV technology for low RDS(ON) and low gate charge. The device supports a continuous drain current of -0.17A and a pulsed drain current of 1.2A. Maximum power dissipation is 350mW with a thermal resistance of 357°C/W. Operating temperature ranges from -50°C to +150°C. It complies with RoHS III/REACH standards and is halogen-free.

Feature Summary

Utilizes Trench Power LV technology to achieve low on-resistance and reduced gate charge.
Designed for automatic insertion with a surface mount SOT-23 package.
Compliant with RoHS III and REACH regulations while remaining halogen-free.

Applications

Video Monitor circuits
Power Management systems

Procurement Notes

Verify the specific part code BSS8400000S0PD against the official specification sheet R0408-BSS8400000S0PD Revision A0 issued April 08, 2024. Confirm that the marking code 'PD' matches the case surface requirements. Ensure compliance with RoHS III and REACH directives is documented for your application. Obtain the latest product information before final design or purchase as specifications are subject to change without notice.

Selection Notes

Select this component for applications requiring a -60V P-Channel MOSFET in a compact SOT-23 footprint. The low gate charge and low RDS(ON) make it suitable for efficient switching operations. Verify that the continuous drain current of -0.17A meets the load requirements. Consider the thermal resistance of 357°C/W when designing heat dissipation strategies for the circuit board.

Part Context

This component belongs to the BSS series of SMD P-Channel Enhancement Mode MOSFETs manufactured by NextGen Components. It serves as an alternative to competitor parts in the market. The internal control code allows for customization, while the 'PD' marking distinguishes this specific variant within the product line.

Replacement Considerations

The datasheet lists 'Cross Main Competitor Parts in Market' but does not provide specific substitute part numbers. Consult the manufacturer's documentation for direct equivalents.