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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10Ohm @ 130mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84 is a P-channel enhancement mode vertical DMOS transistor housed in a TO-236AB (SOT23) plastic surface-mounted package. It features a drain-source voltage of -50 V and a continuous drain current of -130 mA at 25 °C. The device exhibits a maximum on-state resistance of 10 Ω at VGS = -10 V and ID = -130 mA. Total power dissipation is rated at 250 mW, with a junction temperature range from -65 °C to +150 °C.
Feature Summary
- Low threshold voltage enabling direct interface to CMOS and TTL logic families
- High-speed switching capability without secondary breakdown
- Vertical DMOS technology for efficient power handling
Applications
- Line current interrupter in telephone sets
- Relay drivers
- High-speed line transformer drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm halogen-free status and manufacturing origin. Confirm that the requested part number matches the standard BSS84 specification rather than variant designations such as BSS84AK or BSS84/DG, which may have different electrical characteristics or packaging requirements.
Selection Notes
Select this component for low-voltage P-channel switching applications requiring compatibility with standard logic levels. Ensure the operating drain current remains within the -130 mA limit at 25 °C ambient temperature. Consider thermal derating curves if the ambient temperature exceeds 25 °C or if peak currents approach the -520 mA limit for short durations.
Part Context
This device belongs to the Nexperia discrete semiconductor portfolio, specifically the P-channel MOSFET category. It utilizes vertical DMOS technology to provide a compact solution for general-purpose switching tasks. The SOT23 package allows for space-efficient PCB layouts in consumer and industrial electronics where small form factors are critical.
Replacement Considerations
Cross-reference with other P-channel MOSFETs in the SOT23 package having similar VDS and RDS(on) specifications. Verify pinout compatibility and ensure replacement devices meet the same logic-level interface requirements.
