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The BSS84AHZGT116 is a single P-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It features a drain-source voltage rating of -60 V and a continuous drain current of -0.23 A. The device incorporates built-in ESD protection diodes and utilizes an SST3 (SOT-23) surface-mount package. Key electrical parameters include a maximum power dissipation of 350 mW, a gate-source voltage range of ±20 V, and a typical on-resistance of 3.5 Ω at Vgs = -4.5 V. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'HZGT116' against official ROHM documentation to confirm the exact tape-and-reel quantity and ESD protection specifications. Ensure the ordering part number matches the required automotive grade and package variant. Cross-reference the datasheet revision date to validate all electrical characteristics before final procurement decisions.
Select this component for applications requiring a compact P-channel switch with integrated ESD protection. The -60V rating suits standard automotive systems. Verify that the 3.5Ω Rds(on) meets the thermal requirements for the intended load current. Confirm compatibility with the target PCB footprint for the SST3 package.
This part belongs to ROHM's line of small-signal MOSFETs designed for automotive use. It is distinct from other BSS84 variants by its specific packaging and internal ESD structure. The device serves as a low-power switching element in control logic and interface circuits where size and robustness are critical.
Check for direct substitutes such as the BSS84T116 or BSS84WAHZGT106. Verify pinout compatibility and ensure that alternative packages like SOT-323 do not require layout modifications. Confirm that replacement parts meet the same AEC-Q101 automotive qualification standards.