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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84LT7G is a single P-Channel Power MOSFET manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a drain-to-source voltage rating of -50 V and a continuous drain current of -130 mA at 25°C. The device has a maximum power dissipation of 225 mW and operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a static drain-to-source on-resistance of up to 10 Ω at VGS = -5.0 V and ID = -100 mA, with a gate-source threshold voltage ranging from -0.9 V to -2.0 V.
Feature Summary
- Single P-Channel configuration designed for compact board space utilization
- Capable of handling pulsed drain currents up to -520 mA
- Includes an integrated body diode for synchronous rectification applications
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '7G' corresponds to the required tape and reel quantity of 3,500 units as documented in the datasheet. Confirm that the component meets Pb-Free and RoHS compliance standards if required by your manufacturing process. Ensure the application environment remains within the specified thermal resistance and operating temperature limits to maintain reliability.
Selection Notes
Select this component when a low-voltage P-Channel MOSFET is needed for small-signal switching or load control. The SOT-23 package is suitable for space-constrained designs. Evaluate the on-resistance and gate charge specifications against the driving circuit capabilities to ensure efficient switching performance and minimal conduction losses in the target application.
Part Context
This part belongs to the BSS84L family of single P-Channel MOSFETs from onsemi. The family includes variants such as BSS84LT1G and BVSS84LT1G, which share similar electrical ratings but may differ in packaging quantities or automotive qualification status. The BSS84LT7G specifically denotes the standard commercial grade version packaged in reels of 3,500 units.
Replacement Considerations
Compatible substitutes within the same family include BSS84LT1G and BVSS84LT1G. Verify pinout compatibility and electrical parameter equivalence before substitution. Automotive-grade requirements may necessitate the BV prefix variant.
