BSS84P-E6327

$0.06

Description：MOSFET P-CH 60V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:f94f294219e9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 170MA SOT23-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS84P-E6327

Overview

The BSS84P-E6327 is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 150 mA. Key electrical parameters include a maximum on-resistance of 4.6 Ohms, a gate-source voltage rating of ±20 V, and a threshold voltage of 2 V. It supports a power dissipation of 300 mW and operates within a temperature range of -55 °C to +150 °C. The component holds AEC-Q100 qualification.

Feature Summary

P-channel enhancement mode operation for efficient switching control
AEC-Q100 qualified for automotive reliability standards
Compact SOT-323-3 surface-mount packaging

Applications

Low-side load switching applications
Battery protection circuits
General-purpose small signal switching

Procurement Notes

Verify the specific E6327 ordering suffix against official Infineon documentation to confirm exact tape-and-reel specifications. Confirm current production status as availability may vary. Ensure compatibility with required thermal management solutions given the 300 mW power dissipation limit in the SOT-323-3 package.

Selection Notes

Select this component when a P-channel MOSFET with 60 V blocking capability and low gate charge is required. The 4.6 Ohm on-resistance suits low-current switching tasks. Verify that the SOT-323-3 footprint meets PCB layout constraints. Consider the AEC-Q100 qualification if the application demands automotive-grade reliability standards.

Part Context

This part belongs to Infineon's small-signal MOSFET portfolio, designed for compact electronic designs. The BSS84P series offers a balance of performance and size, suitable for portable devices and automotive electronics where space is limited. The E6327 suffix denotes specific packaging and handling characteristics defined by the manufacturer.