ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 60V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：19 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The BSS84PH6327XTSA2 is a single P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PG-SOT23 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of -60 V, a continuous drain current of -170 mA at ambient temperature, and a maximum power dissipation of 360 mW. The device features an on-state resistance of 8 ohms, a gate-source voltage rating of ±20 V, and a gate charge of 0.37 nC.
Feature Summary
- Single P-channel configuration for efficient switching applications
- Enhancement mode operation with low gate charge characteristics
- Designed for surface-mount assembly in compact footprints
Applications
- Low-side and high-side switching circuits
- Load switch implementations
- General-purpose signal switching
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required packaging formats such as cut tape or reel. Confirm that the PG-SOT23 package dimensions align with your PCB layout constraints. Cross-reference the manufacturer datasheet for thermal derating curves to ensure safe operating area compliance under expected load conditions.
Selection Notes
Select this component when a P-channel MOSFET with moderate voltage blocking capability is required. The 8-ohm on-resistance suits low-current applications where minimal conduction loss is not the primary constraint. Ensure the -60 V rating exceeds the maximum circuit voltage to prevent breakdown during normal operation.
Part Context
This part belongs to Infineon's portfolio of small-signal MOSFETs designed for general-purpose switching. The PG-SOT23 package provides a compact solution for space-constrained designs. It serves as a complementary device to N-channel variants within the same series, enabling push-pull or half-bridge configurations in low-power systems.
Replacement Considerations
Direct substitutes must match the P-channel polarity, -60 V minimum voltage rating, and PG-SOT23 package. Verify that alternative components offer comparable on-resistance and gate charge specifications to maintain circuit performance without redesign.
