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The BSS84PL6433HTMA1 is a P-channel enhancement-mode small-signal MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS™ technology and is housed in a PG-SOT-23 (SOT-23-3) surface-mount package. The device features a drain-source breakdown voltage of -60 V and a continuous drain current rating of 170 mA. It is qualified for automotive applications under the AEC-Q100 standard. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a power dissipation capacity of 500 mW, and an operating temperature range from -55 °C to +150 °C.
Verify component authenticity through authorized distribution channels due to obsolete status. Confirm lot traceability and RoHS compliance documentation. Check for alternative sourcing options as manufacturing may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.
Select this component for applications requiring robust P-channel switching with automotive certification. Consider the 170 mA current limit and 60 V voltage rating against circuit demands. Evaluate thermal management needs given the 500 mW power dissipation limit in the SOT-23 package. Verify compatibility with logic-level drive voltages for efficient switching performance.
This part belongs to Infineon's BSS84 series of single N-Channel and P-Channel MOSFETs designed for general-purpose switching. The PL suffix indicates automotive qualification and specific tape-and-reel packaging. It serves as a compact solution for replacing discrete bipolar transistors in modern low-power digital and analog circuits.
Publicly confirmed substitute part numbers are not available in the provided source data.