BSS84PL6433HTMA1

BSS84PL6433HTMA1

$0.04
  • Description:MOSFET P-CH 60V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:aca2e4d31a4b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 60V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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BSS84PL6433HTMA1

Overview

The BSS84PL6433HTMA1 is a P-channel enhancement-mode small-signal MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS™ technology and is housed in a PG-SOT-23 (SOT-23-3) surface-mount package. The device features a drain-source breakdown voltage of -60 V and a continuous drain current rating of 170 mA. It is qualified for automotive applications under the AEC-Q100 standard. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a power dissipation capacity of 500 mW, and an operating temperature range from -55 °C to +150 °C.

Feature Summary

  • Automotive-grade reliability with AEC-Q100 qualification
  • Logic-level operation suitable for low-voltage control circuits
  • Compact SOT-23-3 packaging for space-constrained designs

Applications

  • Automotive load switching applications
  • Low-side and high-side driver circuits
  • General-purpose signal switching in electronic systems

Procurement Notes

Verify component authenticity through authorized distribution channels due to obsolete status. Confirm lot traceability and RoHS compliance documentation. Check for alternative sourcing options as manufacturing may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.

Selection Notes

Select this component for applications requiring robust P-channel switching with automotive certification. Consider the 170 mA current limit and 60 V voltage rating against circuit demands. Evaluate thermal management needs given the 500 mW power dissipation limit in the SOT-23 package. Verify compatibility with logic-level drive voltages for efficient switching performance.

Part Context

This part belongs to Infineon's BSS84 series of single N-Channel and P-Channel MOSFETs designed for general-purpose switching. The PL suffix indicates automotive qualification and specific tape-and-reel packaging. It serves as a compact solution for replacing discrete bipolar transistors in modern low-power digital and analog circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.

BSS84PL6433HTMA1BSS84PL6433HTMA1
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