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Product Detailed Parameters
- Description：BSS FAMILY SOT23 T&R 3K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.59 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84Q-7-F is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50 V drain-source breakdown voltage and supports a continuous drain current of 130 mA. The device exhibits a maximum on-resistance of 10 Ohms at a gate-source voltage of 5 V. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 300 mW. The component utilizes an SOT-23-3 surface-mount package and holds AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- P-channel configuration designed for low-side switching applications requiring efficient signal control.
- Enhancement mode operation ensures reliable turn-on characteristics with defined threshold voltage levels.
Applications
- Automotive electronic systems requiring qualified semiconductor components
- Low-side load switching circuits for peripheral devices
- General-purpose signal switching in consumer electronics
Procurement Notes
Verify that the specific part number includes the Q suffix to confirm AEC-Q101 automotive qualification status. Ensure the ordering code matches the exact manufacturer designation to avoid confusion with non-qualified variants. Confirm package type compatibility during procurement to guarantee correct footprint integration.
Selection Notes
Select this component when automotive reliability standards are mandatory for the application design. The P-channel topology suits low-side switching requirements where source connection to voltage rails is necessary. Evaluate the 10 Ohm on-resistance against thermal constraints to ensure adequate power handling within the specified 300 mW dissipation limit.
Part Context
This component belongs to the BSS84 series of small-signal MOSFETs produced by Diodes Incorporated. The series provides various packaging options and qualification levels for different market segments. The Q-7-F suffix indicates specific automotive qualification, tape-and-reel packaging, and RoHS compliance attributes distinct from other series members.
Replacement Considerations
Direct substitutes include BSS84-7-F and BSS84W-7-F. Verify that replacement parts meet identical AEC-Q101 qualification requirements if automotive usage is intended. Confirm pinout compatibility and electrical parameter alignment before implementation.
