ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 60V 230MA SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3Ohm @ 230mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：34 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SST3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The BSS84T116 is a single P-channel enhancement mode MOSFET manufactured by ROHM Semiconductor in an SOT-23-3 surface-mount package. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 230 mA. The device exhibits a maximum on-resistance of 5.3 Ohms at a gate-source voltage of -20 V, with a threshold voltage of 2.5 V. Electrical characteristics include a rise time of 22 ns, a fall time of 56 ns, and a typical turn-on delay of 12 ns. Power dissipation is rated at 350 mW, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates built-in ESD protection diodes for enhanced circuit reliability.
- Utilizes trench MOSFET technology to achieve high-speed switching performance.
- Designed for low-voltage drive applications with a 4.5 V gate threshold.
Applications
- Switching circuits
- High-side load switches
- Relay driver applications
Procurement Notes
Verify the specific suffix T116 against the manufacturer's official datasheet to confirm packaging details and RoHS compliance status. Ensure the component meets AEC-Q101 requirements if automotive qualification is necessary, as standard variants may differ. Cross-reference the ordering number with authorized distributors to validate authenticity and avoid counterfeit components.
Selection Notes
Select this component for designs requiring a compact P-channel switch with integrated electrostatic discharge protection. The SOT-23-3 footprint suits space-constrained PCB layouts. Evaluate the 5.3 Ohm on-resistance against thermal constraints, as power dissipation is limited to 350 mW. Confirm that the 60 V rating aligns with the system's maximum voltage levels.
Part Context
This part belongs to ROHM's general-purpose small signal MOSFET lineup, optimized for consumer electronics and industrial control systems. The BSS84 series is widely adopted for its balance of switching speed and low on-state resistance in the SOT-23 form factor. It serves as a standard solution for low-power switching tasks where board space is limited.
Replacement Considerations
The BSS84AHZG is documented as a compatible alternative with identical pinout and package configuration. Verify electrical parameter equivalence before substitution.
