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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS84TC is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 50 V and supports a continuous drain current of 130 mA. Key electrical characteristics include a maximum on-resistance of 10 Ohms at 5 V gate drive, a gate-source threshold voltage of 2 V, and a power dissipation rating of 300 mW. It operates within a temperature range of -55 °C to +150 °C and meets AEC-Q101 qualification standards for high reliability.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Features low gate threshold voltage and low input capacitance for efficient control.
- Qualified to AEC-Q101 standards ensuring high reliability in automotive environments.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific suffix 'TC' against the official Diodes Incorporated datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if mandated by your assembly process. Cross-reference the part number with authorized distributors to confirm current availability status, as older variants may be discontinued or superseded by updated revisions.
Selection Notes
Select this component when a P-channel MOSFET with a 50 V rating and SOT-23-3 footprint is required. Consider its 130 mA current capability and 10 Ohm on-resistance for low-power switching tasks. Verify that the thermal dissipation limits align with your circuit's power constraints. Confirm compatibility with your system's logic levels given the 2 V threshold voltage specification.
Part Context
This component belongs to the BSS84 family of single P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching and power management roles. The family emphasizes low on-resistance and fast switching speeds. The BSS84TC variant specifically denotes a particular packaging or taping configuration within this established product line.
Replacement Considerations
Direct substitutes include BSS84-7-F and BSS84Q-7-F from Diodes Incorporated. Other manufacturers offer equivalent parts such as BSS84 from Nexperia or onsemi. Verify pinout compatibility and electrical parameters before substitution.
