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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84W-7-F is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -50 V and a continuous drain current (Id) of -130 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 10 Ω at Vgs = -5 V and Id = -0.1 A, with a typical value of 6 Ω. Gate threshold voltage (Vgs(th)) ranges from -0.8 V to -2.0 V at Id = -1 mA. Total power dissipation is rated at 200 mW, with a thermal resistance (RθJA) of 625 °C/W. Operating junction temperature spans -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Qualified to JEDEC standards for high reliability
Applications
- General purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard SOT323 package in tape and reel configuration containing 3,000 units per carrier. Confirm compliance requirements including RoHS 3, halogen-free, and antimony-free status against project specifications. Ensure the selected component matches the exact electrical ratings required for the target circuit design.
Selection Notes
Select this component for applications requiring a compact single P-channel MOSFET with low on-state resistance. Evaluate the 200 mW power dissipation limit and 625 °C/W thermal resistance against the expected ambient temperature and PCB pad layout conditions. Verify that the -50 V breakdown voltage and -130 mA continuous current meet the system's operational demands.
Part Context
This part belongs to the BSS84 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a SOT323 surface-mount package designed for space-constrained electronics. The device is engineered to minimize on-state resistance while maintaining superior switching performance for portable and industrial applications.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts, electrical parameters, and package dimensions before implementation.
