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Product Detailed Parameters
- Description：MOSFET P-CH 50V 0.13A SOT323
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The BSS84W-G is a P-Channel enhancement mode MOSFET manufactured by Comchip Technology. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a drain-source breakdown voltage of 50 V and a continuous drain current of 130 mA at ambient temperature. It operates with a gate-source voltage range of -20 V to +20 V and has a maximum power dissipation of 200 mW. The component supports an operating temperature range from -55°C to +150°C.
Feature Summary
- P-Channel enhancement mode operation for low-side switching applications
- Integrated body diode configuration within the single transistor structure
- Surface-mount design optimized for automated assembly processes
Applications
- Low-side load switching circuits
- Power management modules requiring compact form factors
- Battery protection systems utilizing small signal control
Procurement Notes
Verify the specific datasheet version provided by Comchip Technology before finalizing designs, as electrical characteristics may vary between revisions. Confirm that the SOT-323-3 footprint matches the target PCB layout requirements precisely. Ensure thermal management strategies account for the 200 mW power dissipation limit under expected operating conditions to maintain reliability within the specified temperature range.
Selection Notes
Select this component when a P-Channel MOSFET is required for space-constrained designs. The SOT-323-3 package offers a compact solution compared to larger alternatives. Consider the 50 V rating and 130 mA current capability against circuit demands. Verify compatibility with logic-level drive voltages if interfacing directly with microcontrollers or standard digital outputs without additional level shifting stages.
Part Context
This part belongs to the Comchip Technology discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a complementary counterpart to N-Channel variants like the BSS138W-G, providing designers with options for push-pull configurations or high-side switching topologies where P-Channel devices are preferred for simplified gate drive requirements.
Replacement Considerations
Cross-reference with other P-Channel MOSFETs in the SOT-323 package from different manufacturers. Verify pinout compatibility and ensure equivalent or superior electrical ratings for Vds, Id, and Rds(on) to guarantee functional interchangeability without redesigning the surrounding circuitry.
