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Product Detailed Parameters
- Description：MOSFET N-CH 240V 260MA SOT89-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：97 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89-4-2
- Package / Case：TO-243AA
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Overview
The BSS87 E6327 is an N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-89-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 240 V and a continuous drain current of 260 mA. The device features a maximum on-resistance of 3.9 Ohms, a gate threshold voltage of 1.2 V, and a total gate charge of 3.7 nC. It supports a power dissipation of 1 W and operates within a temperature range of -55 °C to +150 °C. The component holds AEC-Q101 qualification for automotive applications.
Feature Summary
- N-channel enhancement mode operation with high breakdown voltage capability
- Automotive-grade reliability certified under AEC-Q101 standards
- Low gate charge characteristics enabling efficient switching performance
Applications
- Automotive electronic control units requiring robust switching
- High-voltage signal processing circuits
- Power management modules in industrial equipment
Procurement Notes
Verify the specific suffix E6327 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT-89-3 package. Confirm that the AEC-Q101 qualification meets project requirements. Check for any recent lifecycle notifications regarding production status or obsolescence before finalizing procurement plans.
Selection Notes
Select this component when a single N-channel MOSFET with high voltage tolerance is required in a compact SOT-89-3 package. The low gate charge aids in reducing drive power consumption. Verify that the 260 mA current rating suffices for the intended load. Consider the thermal resistance and power dissipation limits relative to the application's ambient temperature conditions.
Part Context
This part belongs to the BSS87 series of small-signal MOSFETs from Infineon. The series is designed for general-purpose switching applications. The E6327 suffix typically denotes specific packaging configurations such as cut tape or reel options. This component serves as a discrete switching element within larger semiconductor assemblies.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully. Generic equivalents may not match the AEC-Q101 qualification or exact package dimensions.
