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The Infineon BSS87E6327T is a single N-channel enhancement-mode MOSFET housed in a SOT-89-3 surface-mount package. It features a drain-source breakdown voltage of 240 V and a continuous drain current of 260 mA at 25°C. The device exhibits a maximum on-resistance of 3.9 Ohms, with a gate threshold voltage of 1.2 V and a total gate charge of 3.7 nC. It supports a power dissipation of 1 W and operates within a temperature range of -55°C to +150°C. The component holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix against official documentation to confirm exact packaging and tape specifications. Confirm current production status as lifecycle changes may affect availability. Ensure compatibility with required automotive quality standards before finalizing procurement decisions.
Select this component when a robust N-channel solution with 240 V blocking capability is required in a compact SOT-89-3 footprint. Consider the 3.9 Ohm on-resistance for thermal management in low-current applications. Verify that the 260 mA continuous current rating meets the specific circuit load requirements.
This part belongs to the BSS87 series of small-signal MOSFETs designed by Infineon Technologies. The series provides various voltage ratings and packages for general electronic and automotive applications. The E6327 suffix typically denotes specific reel or tape-and-reel packaging configurations used by distributors.
Consult official replacement guides for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.