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Product Detailed Parameters
- Description：MOSFET N-CH 240V 260MA SOT89
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：97 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT89
- Package / Case：TO-243AA
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Overview
The BSS87L6327HTSA1 is a Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It features an N-channel enhancement mode configuration housed in a surface-mount SOT-89-3 package. The device supports a drain-source breakdown voltage of 240 V and a continuous drain current of 260 mA. Key electrical characteristics include a maximum on-resistance of 6 Ohms, with rise and fall times of 3.5 ns each. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1 W.
Feature Summary
- Utilizes Gallium Nitride technology for high-voltage performance
- Features fast switching capabilities with low transition times
- Designed for compact surface-mount applications
Applications
- High-voltage switching circuits
- Power management modules
- Automotive electronics systems
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific suffix matches the required specifications. Check for end-of-life status as discontinuation may affect long-term supply availability. Ensure storage conditions comply with moisture sensitivity levels defined in the datasheet. Validate that the received part number corresponds exactly to the requested GaN FET variant.
Selection Notes
Select this component when a high-voltage, small-signal GaN solution is required in a compact footprint. Consider the 240 V rating and 6 Ohm on-resistance for appropriate load matching. Evaluate the thermal management requirements given the 1 W power dissipation limit. Compare switching speeds against circuit timing constraints. Ensure the SOT-89-3 package fits the available board space.
Part Context
This part belongs to Infineon's portfolio of discrete semiconductor devices, specifically focusing on advanced compound semiconductor technologies. The BSS87 series represents the company's integration of GaN materials into standard packaging formats. This allows designers to leverage wide-bandgap properties without requiring complex form factors. The component serves as a bridge between traditional silicon MOSFETs and higher-performance power solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative GaN transistors based on pinout and electrical ratings if sourcing from other manufacturers.
