Single Bipolar Transistors BST39,115 product image

BST39,115

$0.74
  • Description:TRANS NPN 350V 0.1A SOT-89
  • Series:-

SKU:661e3712e4b6 Category: Brand:

  
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BST39,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 350V 0.1A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BST39,115

  • Description:TRANS NPN 350V 0.1A SOT-89
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 4mA, 50mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 20mA, 10V
  • Power - Max:1.3 W
  • Frequency - Transition:70MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for BST39,115

BST39,115

Single Bipolar Transistors Overview

The BST39,115 is a single NPN silicon bipolar junction transistor manufactured by Nexperia. It is housed in a surface-mount SOT-89-3 package designed for automated assembly. The device supports a maximum continuous collector current of 100 mA and operates with a collector-emitter voltage rating of 350 V. Additional electrical limits include a collector-base voltage of 400 V and an emitter-base voltage of 5 V. Power dissipation is rated at 1.3 W, with a gain-bandwidth product (fT) of 70 MHz.

Single Bipolar Transistors Feature Summary

  • High voltage capability suitable for demanding switching applications
  • Robust power handling within a compact surface-mount footprint
  • Optimized for high-speed signal processing tasks

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • High-voltage amplifier stages
  • Driver circuits for loads requiring moderate current

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet specifications against design requirements to validate thermal and electrical performance margins.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require high voltage blocking capabilities combined with moderate current handling. The SOT-89-3 package offers improved thermal performance compared to smaller packages. Ensure the application does not exceed the specified power dissipation limits under worst-case operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the BST series of high-voltage NPN transistors from Nexperia. The series is engineered for robust performance in environments requiring reliable switching and amplification. The specific model integrates standard silicon technology optimized for modern surface-mount manufacturing processes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

BST39,115BST39,115
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