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Product Detailed Parameters
- Description：MOSFET N-CH 100V 190MA TO236AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：830mW (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-236AB
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BST82,215 is a single N-channel enhancement-mode MOSFET manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 190 mA. Its on-state resistance is specified at 10 Ohms with a gate-source threshold voltage of 1 V. The component operates within a temperature range of -65°C to +150°C and has a maximum power dissipation of 830 mW.
Feature Summary
- Single N-channel enhancement mode configuration
- High voltage blocking capability up to 100 V
- Compact SOT-23-3 surface mount footprint
Applications
- Ballast transistor circuits
- Motor drive applications
- Reverse battery protection systems
Procurement Notes
Verify the product lifecycle status before procurement as the BST82,215 may be marked as Not Recommended for New Designs (NRND). Confirm that the specific SOT-23-3 package dimensions align with the target PCB layout requirements. Ensure compliance with RoHS and REACH directives is documented for the intended market. Validate that the 10 Ohm on-resistance meets the thermal management constraints of the final assembly.
Selection Notes
Select this component when a high-voltage N-channel switch is required in a compact form factor. The 100 V rating distinguishes it from standard low-voltage logic-level MOSFETs. Consider the 190 mA current limit for load driving capabilities. The SOT-23-3 package offers space efficiency for dense circuit boards. Evaluate the 830 mW power dissipation against ambient operating conditions.
Part Context
This part belongs to Nexperia's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose switching applications requiring robust voltage handling. The SOT-23-3 package is widely used in consumer electronics and industrial control systems where board space is limited. The device represents a balance between voltage rating and physical size.
Replacement Considerations
Check for direct pin-compatible alternatives with similar 100 V ratings and SOT-23 packages. Verify that any substitute maintains the same N-channel enhancement mode characteristics. Ensure the replacement device meets the same thermal and current specifications.
