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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.5A SOT363-6
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：175mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：5.7 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：228 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：560mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT363-PO
- Package / Case：6-VSSOP, SC-88, SOT-363
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Overview
The BSV236SP L6327 is a P-Channel OptiMOS-P small-signal transistor manufactured by Infineon Technologies. It features a -20 V drain-source breakdown voltage and a continuous drain current of -1.5 A at 25°C. The device operates in enhancement mode with a maximum gate-source voltage of ±12 V. Key electrical parameters include a typical on-state resistance of 131 mΩ at VGS=-4.5V and ID=-1.5A, and a total gate charge of 5.7 nC. It supports an operating temperature range from -55°C to +150°C and is housed in a SOT-363 package.
Feature Summary
- Super Logic Level capability rated for 2.5 V operation
- Rated for avalanche energy and high dv/dt performance
- Optimized for low power dissipation in compact designs
Applications
- Low-side switching applications
- Power management circuits
- Automotive electronics systems
Procurement Notes
Verify the specific ordering code Q67042-S4070 against the manufacturer's official documentation to ensure compatibility with the BSV236SP designation. Confirm that the component meets all required environmental and safety standards for the intended application before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring a P-Channel MOSFET with low on-resistance and high-speed switching capabilities. Consider the thermal resistance characteristics and the specific gate threshold voltage requirements when designing the driving circuitry to ensure optimal performance within the specified temperature range.
Part Context
This part belongs to the BSV236 series of OptiMOS-P transistors. These devices are designed for general-purpose switching applications where efficiency and speed are critical. The series offers various configurations to meet different voltage and current requirements while maintaining a small footprint suitable for modern electronic designs.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Ensure any replacement matches the original specifications regarding voltage ratings, current handling, and package dimensions.
