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Product Detailed Parameters
- Description：JFET N-CH TO18
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：40 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor BSV79 is an N-channel silicon Junction Field-Effect Transistor (JFET) designed for switching applications. It operates within a drain-source voltage range of 40 V and dissipates up to 350 mW of power. The device features a gate-source reverse voltage rating of 40 V and a maximum junction temperature of +175 °C. Electrical characteristics include a typical on-resistance of 40 Ω at zero gate bias, with a gate-source cutoff voltage ranging from 2.0 V to 7.0 V. The component utilizes a TO-18 metal can package with three leads designated as source, drain, and gate.
Feature Summary
- N-channel silicon construction optimized for switching operations
- High thermal stability supporting operation up to +175 °C
- Metal can packaging providing robust physical protection
Applications
- Electronic switching circuits
- Signal routing systems
- Analog control interfaces
Procurement Notes
Verify the specific ordering suffix required for plating configuration before purchase. The manufacturer offers Tin/Lead or Lead-Free options by appending the corresponding suffix to the part number during the order process. Confirm availability status as the component may be subject to End-of-Life management protocols affecting long-term supply continuity.
Selection Notes
Select the BSV79 when an N-channel JFET with a 40 V breakdown voltage and TO-18 mechanical form factor is required. Ensure the circuit design accommodates the specified gate-source cutoff voltage range of 2.0 V to 7.0 V for proper switching thresholds. Verify that the thermal resistance and power dissipation limits align with the system's operating environment and heat sinking capabilities.
Part Context
The BSV79 belongs to a family of N-channel silicon JFETs manufactured by Central Semiconductor Corp. It shares the same package outline and general switching architecture with the BSV80 model, though electrical parameters such as on-resistance and cutoff voltage differ between the two variants. Both devices utilize the standard TO-18 case style.
Replacement Considerations
Official documentation lists no direct replacement part numbers for the BSV79. The manufacturer indicates that stock only is available for this component. Engineers seeking alternatives must evaluate third-party discrete JFETs based on matching voltage ratings, package dimensions, and electrical performance curves.
