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Product Detailed Parameters
- Description：MOSFET N-CH 25V 35A/40A TSDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：35A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-34
- Package / Case：8-PowerVDFN
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Overview
The BSZ011NE2LS5IATMA1 is an N-channel power MOSFET from Infineon’s OptiMOS 5 family, designed for high-efficiency switching applications. It features a low on-resistance of 820 µΩ at 10V gate drive and supports continuous drain currents up to 40A (Tc) or 35A (Ta). The device operates with a maximum drain-source voltage of 25V and handles a power dissipation of 69W (Tc). Packaged in a surface-mount PG-TSDSON-8-34 format, it offers thermal performance suitable for space-constrained designs.
Feature Summary
- Utilizes OptiMOS 5 technology for optimized switching losses and conduction efficiency
- Low thermal resistance package design supporting high power density
- Enhanced avalanche ruggedness for robust operation in inductive loads
Applications
- Point-of-load DC-DC converters
- Synchronous rectification stages
- High-current distribution networks
Procurement Notes
Verify the specific suffix 'ATMA1' corresponds to the tape-and-reel packaging configuration required for automated assembly processes. Confirm that the PG-TSDSON-8-34 footprint matches the PCB land pattern exactly. Ensure thermal management solutions account for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a 25V rating is sufficient and minimal conduction loss is critical. Compare against higher voltage variants if system transients exceed 25V. Evaluate the TSDSON-8-34 package size against available board real estate. Consider the 820 µΩ RDS(on) value relative to total system efficiency targets.
Part Context
This part belongs to Infineon’s OptiMOS 5 series, which focuses on reducing gate charge and on-resistance for improved power conversion efficiency. The TSDSON package provides a compact solution compared to traditional TO-220 formats, facilitating integration into modern high-density power supply architectures.
Replacement Considerations
Direct substitutes must match the 25V/40A specification and PG-TSDSON-8-34 footprint. Verify pin compatibility and thermal characteristics before substitution.
