BSZ019N03LSATMA1

$1.24

Description：MOSFET N-CH 30V 22A . 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:94d881c47ffe Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 22A . 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta). 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ019N03LSATMA1

Overview

The BSZ019N03LS is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum on-resistance of 1.9 mΩ at VGS=4.5 V and supports a continuous drain current of 149 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL package, providing a thermal resistance from junction to case of 1.8 K/W. Key electrical parameters include a total gate charge of 44 nC (0V to 10V) and an output charge of 25 nC.

Feature Summary

Optimized for high-performance Buck converters in server and VGA applications
Very low figure of merit Qoss for high-frequency switching power supplies
Excellent gate charge x RDS(on) product figure of merit
Superior thermal resistance characteristics

Applications

High-performance Buck converters
Server power supply designs
VGA power management circuits

Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm compliance with RoHS standards and halogen-free requirements per IEC61249-2-21. Ensure JEDEC qualification aligns with target application reliability standards. Check datasheet revision history for updates to current ratings or package drawings before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring low conduction losses at logic-level gate voltages. Evaluate the thermal resistance against the PCB cooling area constraints. Consider the avalanche energy rating if inductive load switching is present. Verify that the package dimensions fit the intended footprint layout.

Part Context

This part belongs to Infineon's OptiMOS family of power MOSFETs. It is designed specifically for low-voltage, high-current synchronous rectification applications. The technology focuses on minimizing switching losses through optimized capacitance values and low gate charge profiles.