BSZ023N04LSATMA1

$1.34

Description：MOSFET N-CH 40V 22A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8fa5df974692 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 22A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2630 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ023N04LSATMA1

Overview

The BSZ023N04LSATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 series. It utilizes silicon technology and is housed in a TSDSON-FL-8 surface-mount package. The device features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 40 A at 25°C. Key electrical parameters include a maximum on-resistance of 2.3 mΩ, a gate charge of 25 nC, and a threshold voltage of 2.3 V. It supports a wide operating temperature range from -55°C to +175°C with a power dissipation capacity of 75 W.

Feature Summary

OptiMOS 5 technology providing low on-resistance for high efficiency
Enhanced thermal performance via TSDSON-FL-8 package design
High avalanche ruggedness and robust short-circuit capability

Applications

DC-DC converter modules
Motor control applications
Power distribution systems

Procurement Notes

Verify the exact part number suffix against official Infineon documentation to ensure correct tape-and-reel specifications and marking codes. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's datasheet before procurement. Cross-reference ordering numbers with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when a compact surface-mount solution is required for 40V logic-level switching applications. The low gate charge facilitates fast switching speeds suitable for high-frequency converters. Ensure the PCB layout accommodates the specific thermal pad requirements of the TSDSON-FL-8 package to maximize heat dissipation capabilities.

Part Context

This part belongs to the BSZ0xx series of N-channel Power MOSFETs designed by Infineon Technologies. These devices are engineered for general-purpose power switching applications requiring high reliability and low conduction losses. The OptiMOS 5 generation represents an advancement in silicon planar technology optimized for automotive and industrial environments.