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Product Detailed Parameters
- Description：MOSFET N-CH 25V 19A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ031NE2LS5ATMA1 is an N-channel OptiMOS™ 5 Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 3.1 mΩ at VGS=4.5 V and supports a continuous drain current of 80 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL (S3O8) surface-mount package. Key dynamic parameters include a total gate charge of 6.3 nC (VGS=0 to 4.5 V) and an output charge of 9.1 nC, optimized for high-frequency synchronous buck converters.
Feature Summary
- Optimized for high-performance synchronous buck converters
- Very low figure of merit Qoss for high-frequency SMPS applications
- Low switching figure of merit FOMsw for high-frequency operation
- Excellent gate charge x RDS(on) product factor
Applications
- High-performance synchronous buck converters
- High-frequency switch-mode power supplies (SMPS)
- Target applications qualified according to JEDEC standards
Procurement Notes
Verify the specific ordering code matches the required tape-and-reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements per IEC61249-2-21. Ensure the procurement specification aligns with the absolute maximum ratings provided in the datasheet to prevent operational failure.
Selection Notes
Select this component when designing circuits requiring a 25 V rating with minimal conduction losses at low gate drive voltages. The low Qoss and FOMsw make it suitable for high-frequency topologies where switching efficiency is critical. Verify thermal management capabilities against the specified junction-to-case thermal resistance.
Part Context
This part belongs to the Infineon OptiMOS™ 5 family, designed for silicon-based power switching applications. It represents a generation of MOSFETs focused on reducing switching losses through optimized gate charge characteristics while maintaining low on-state resistance in compact surface-mount packages.
Replacement Considerations
Consult official replacement lists or cross-reference tools for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics against the original datasheet specifications.
