BSZ033NE2LS5ATMA1

$1.21

Description：MOSFET N-CH 25V 18A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8f5bc2dffc79 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 18A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

Download product information

BSZ033NE2LS5ATMA1

Overview

The BSZ033NE2LS5 is an OptiMOS™ 5 N-channel Power-MOSFET with a 25 V drain-source breakdown voltage (VDS). It features a maximum on-resistance (RDS(on)) of 3.3 mΩ at VGS=4.5 V and supports a continuous drain current (ID) of 77 A at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes a PG-TSDSON-8 FL package.

Feature Summary

Optimized for high-performance buck converters
Very low FOMQOSS and FOMSW for high-frequency SMPS applications
Excellent gate charge x RDS(on) product figure of merit
Monolithically integrated Schottky-like diode

Applications

High-performance buck converters
High-frequency switching mode power supplies (SMPS)
Or-ing switches

Procurement Notes

Verify the specific ordering code matches the required package variant. Confirm RoHS compliance and halogen-free status against project specifications. Ensure thermal management design accounts for the specified RthJC and RthJA values under actual operating conditions.

Selection Notes

Select this component when low conduction losses and fast switching are critical in 25 V systems. The optimized gate charge characteristics make it suitable for high-frequency operation. Verify that the package thermal resistance meets the system's heat dissipation requirements.

Part Context

This part belongs to Infineon's OptiMOS™ 5 portfolio, designed for advanced power management. It represents a silicon-based enhancement-mode MOSFET technology focused on minimizing figures of merit for switching and conduction losses in compact surface-mount packages.