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Product Detailed Parameters
- Description：MOSFET N-CH 40V 19A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ034N04LSATMA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It features a TSDSON-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 40 V and delivers a continuous drain current of 40 A. Its maximum on-resistance is specified at 3.4 mΩ, with a gate charge of 25 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation rating of 52 W.
Feature Summary
- OptiMOS 5 technology provides optimized performance for low-voltage applications
- Enhanced switching characteristics support high-frequency operation
- Lead-free packaging complies with RoHS standards
Applications
- Low-side switching in DC-DC converters
- Load switching in industrial control systems
- Power management circuits in automotive electronics
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation to confirm specific tape-and-reel configurations or qualification grades. Ensure that the ordering code matches the required package variant and compliance certifications before finalizing procurement orders.
Selection Notes
Select this component when a 40 V N-channel MOSFET with low on-resistance is required in a compact TSDSON-8 footprint. Consider the 40 A current capability and thermal performance limits relative to the specific PCB layout and cooling requirements of the target application design.
Part Context
This part belongs to the BSZ series of OptiMOS 5 transistors designed for general-purpose power switching. It represents an evolution in silicon gate technology aimed at reducing conduction losses while maintaining robust avalanche capabilities suitable for demanding electronic environments.
Replacement Considerations
Cross-reference with other OptiMOS 5 devices such as BSC034N04LS or BSZ024N04LS6ATMA1 if different current ratings or package dimensions are acceptable. Verify pinout compatibility and electrical parameter overlaps before substituting.
