BSZ042N04NSGATMA1

$0.99

Description：MOSFET N-CH 40V 40A TSDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a8346b1a23cc Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 40A TSDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3700 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerVDFN

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BSZ042N04NSGATMA1

Overview

The BSZ042N04NSGATMA1 is an N-channel OptiMOS™3 power transistor manufactured by Infineon Technologies. It features a PG-TSDSON-8 package with a maximum drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 40 A at TC=25°C. The device has a maximum on-resistance (RDS(on)) of 4.2 mΩ at VGS=10 V and ID=20 A. Total gate charge (Qg) is typically 35 nC. Power dissipation reaches 69 W at TC=25°C, with a thermal resistance junction-to-case (RthJC) of 1.8 K/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Fast switching MOSFET optimized for DC/DC converters
Avalanche rated capability
Superior thermal resistance characteristics
Excellent gate charge x RDS(on) figure of merit

Applications

Switching Mode Power Supplies (SMPS)
DC/DC converters

Procurement Notes

Verify the component against official datasheets to confirm specifications match design requirements. Ensure compatibility with JEDEC standards if required for target applications. Check for RoHS compliance and halogen-free status according to IEC61249-2-21. Confirm package marking '042N04N' for identification.

Selection Notes

Select this component for low-voltage, high-current applications requiring fast switching speeds. Consider its avalanche rating for inductive load protection. Evaluate thermal management needs based on the specified RthJC value. Ensure gate drive voltage supports the 10 V threshold for optimal RDS(on) performance.

Part Context

This part belongs to Infineon's OptiMOS™3 family, designed for efficient power conversion. It utilizes silicon technology in a surface-mount PG-TSDSON-8 package. The series focuses on minimizing conduction losses while maintaining robust switching performance suitable for modern electronic power systems.