BSZ042N06NSATMA1

$1.03

Description：MOSFET N-CH 60V 17A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:94c3b6e93e61 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 17A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ042N06NSATMA1

Overview

The BSZ042N06NSATMA1 is an N-channel OptiMOS™ Power-Transistor with a 60 V drain-source voltage rating. It features a maximum on-state resistance of 4.2 mΩ at VGS=10 V and ID=20 A, supporting a continuous drain current of 98 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL (S3O8) package. Key dynamic parameters include a total gate charge of 27 nC and an output charge of 32 nC. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Optimized for high-performance synchronous rectification in switch-mode power supplies.
Features enlarged source interconnection to ensure higher solder joint reliability.
Superior thermal resistance characteristics for efficient heat dissipation.
100% avalanche tested to ensure robustness under transient conditions.

Applications

High-performance synchronous rectification in switch-mode power supplies
Target applications qualified according to JEDEC standards

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Confirm that the application environment remains within the stated thermal and electrical absolute maximum ratings to maintain device integrity.

Selection Notes

Select this component when low conduction losses are critical due to its 4.2 mΩ RDS(on). Consider the TSDSON-8 FL package for applications requiring enhanced mechanical stability and thermal performance. Evaluate the 60 V breakdown voltage against system peak voltages to ensure adequate safety margins during operation.

Part Context

This part belongs to the OptiMOS™ family of power transistors from Infineon Technologies. It is designed specifically for efficiency improvements in power conversion circuits. The device integrates advanced silicon technology to minimize switching losses while maintaining high current handling capabilities in a compact surface-mount footprint.