BSZ0503NSIATMA1

$0.99

Description：MOSFET N-CH 30V 20A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9ce0d5c87155 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 20A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ0503NSIATMA1

Overview

The BSZ0503NSIATMA1 is an OptiMOS 5 N-channel Power-MOSFET with a 30 V drain-source voltage rating. It features a maximum continuous drain current of 82 A at TC=25°C and a pulsed drain current capability of 328 A. The device exhibits a low on-resistance (RDS(on)) of up to 4.2 mΩ at VGS=4.5V and 3.4 mΩ at VGS=10V. Key dynamic parameters include a total gate charge (Qg) of 7.1 nC at VGS=4.5V and 15 nC at VGS=10V, alongside an output charge (Qoss) of 10.6 nC. Thermal resistance from junction to case is specified at 3.5 K/W.

Feature Summary

Optimized for high-performance buck converter applications
Features a monolithically integrated Schottky-like diode
Guaranteed 100% avalanche testing for enhanced reliability

Applications

High-performance buck converters
Synchronous rectification in DC-DC conversion circuits

Procurement Notes

Verify the specific ordering code suffix ATMA1 to confirm tape-and-reel packaging requirements. Ensure that the PG-TSDSON-8 FL package dimensions align with the target PCB footprint. Confirm RoHS compliance and halogen-free status against IEC61249-2-21 standards for environmental regulations. Cross-reference the JEDEC qualification status for the intended industrial application environment.

Selection Notes

Select this component when low gate charge and fast switching speeds are critical for efficiency in synchronous buck topologies. The logic-level gate drive compatibility allows operation at VGS=4.5V, simplifying driver design. Evaluate thermal management needs based on the RthJC of 3.5 K/W and ensure adequate copper area on the PCB to maintain the specified current ratings under operating conditions.

Part Context

This part belongs to Infineon's OptiMOS 5 family, designed for advanced power switching applications. It utilizes Trench technology to achieve superior performance metrics compared to previous generations. The device is manufactured using silicon processes optimized for low on-resistance and robust avalanche characteristics within a compact surface-mount package.

Replacement Considerations

BSZ0501NSIATMA1

FAQ

Is the BSZ0503NSI qualified for automotive applications?

The datasheet states the product is qualified according to JEDEC for target applications. Use in automotive, aviation, or aerospace systems requires express written approval from Infineon Technologies.