BSZ058N03MSGATMA1

$0.76

Description：MOSFET N-CH 30V 14A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:29ddc3da02e6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 14A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ058N03MSGATMA1

Overview

The BSZ058N03MSGATMA1 is a single N-channel enhancement mode power MOSFET from Infineon Technologies, belonging to the OptiMOS 3 series. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 40 A at 25°C. Its maximum on-resistance (Rds(on)) is specified at 7.1 mOhms. The gate-source voltage limits are -20 V to +20 V, with a typical threshold voltage of 2.2 V. Gate charge (Qg) is 22 nC. Power dissipation reaches 45 W, operating within a temperature range of -55°C to +150°C.

Feature Summary

OptiMOS 3 technology provides optimized performance for low-voltage power switching applications.
Integrated thermal management capabilities support high power dissipation in compact packages.
Enhanced mode operation ensures reliable switching characteristics.

Applications

DC-DC converter circuits
Load switching applications
Power management modules

Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference datasheet revisions to validate electrical parameters against specific design requirements.

Selection Notes

Select this component for designs requiring a 30 V rating with moderate current handling in an 8-pin surface-mount footprint. Compare Rds(on) and gate charge specifications against alternative OptiMOS generations to balance conduction losses and switching speed. Ensure thermal design accommodates the 45 W dissipation capability under expected operating conditions.

Part Context

This component is part of Infineon's OptiMOS 3 portfolio, designed for efficient power control in automotive and industrial sectors. It shares the TSDSON-8 form factor with other devices in the series, facilitating board layout standardization while offering distinct electrical characteristics tailored for specific voltage and current levels.