BSZ0602LSATMA1

$1.39

Description：MOSFET N-CH 80V 13A/40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:33e16462d267 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 13A/40A TSDSON
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2340 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

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BSZ0602LSATMA1

Overview

The BSZ0602LSATMA1 is an OptiMOS5 power transistor manufactured by Infineon Technologies. It features an N-channel enhancement mode architecture housed in a PG-TSDSON-8 FL package with enlarged source interconnection. Key electrical parameters include a drain-source breakdown voltage (VDS) of 80 V, a maximum on-resistance (RDS(on)) of 7.0 mΩ at VGS=10 V, and a continuous drain current (ID) of 40 A at TC=25°C. The device exhibits a total gate charge (Qg) of 14.1 nC at VGS=4.5 V and supports a pulsed drain current of 160 A.

Feature Summary

Optimized for high-frequency switching applications
Logic-level gate drive capability
Enhanced solder joint reliability via enlarged source interconnection
100% avalanche tested

Applications

Charger designs
High-frequency switching circuits

Procurement Notes

Verify the specific ordering code suffix to confirm the tape-and-reel packaging configuration. Ensure that the component marking matches the datasheet specification '0602LS'. Confirm compliance with RoHS standards and halogen-free requirements according to IEC61249-2-21 before finalizing procurement specifications.

Selection Notes

Select this component when an 80 V rating is required alongside low conduction losses. The logic-level gate threshold allows for efficient drive from standard logic voltages. Consider the thermal resistance characteristics and the specific package footprint when designing the PCB layout for optimal heat dissipation.

Part Context

This part belongs to the OptiMOS5 family of power transistors designed for efficiency and reliability. The PG-TSDSON-8 FL package provides a compact form factor suitable for space-constrained designs while maintaining robust thermal performance through its specialized lead frame structure.