BSZ060NE2LSATMA1

$0.46

Description：MOSFET N-CH 25V 12A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f1421a3c0433 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 25V 12A/40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：670 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 26W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ060NE2LSATMA1

Overview

The BSZ060NE2LSATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 25 V drain-source voltage rating and supports a continuous drain current of 40 A. The device exhibits a maximum on-resistance of 6.5 mΩ at 10 V gate drive. Key electrical characteristics include a gate charge of 9.1 nC, a threshold voltage of 2 V, and a power dissipation capacity of 26 W. It operates within a temperature range of -55 °C to +150 °C and is housed in a TSDSON-8 surface-mount package.

Feature Summary

OptiMOS technology integration for optimized switching performance
Low on-resistance design for efficient power handling
Enhancement mode operation with built-in body diode

Applications

Power delivery circuits
DC-DC converter designs
General purpose power switching applications

Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Cross-reference datasheet revisions to validate parameter consistency against specific application requirements.

Selection Notes

Select this component for low-voltage applications requiring high current capability within a compact footprint. Evaluate thermal management needs based on the specified power dissipation limits. Ensure gate drive voltages remain within the acceptable range to maintain optimal on-state resistance and switching efficiency.

Part Context

This component belongs to the OptiMOS family of N-channel power MOSFETs designed by Infineon Technologies. These devices are engineered for high efficiency and reliability in power conversion systems. The TSDSON-8 package provides a balance between thermal performance and space constraints for modern electronic designs.