BSZ068N06NSATMA1

$1.38

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0b8ef5cbfae4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 40A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-FL
Package / Case：8-PowerTDFN

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BSZ068N06NSATMA1

Overview

The BSZ068N06NSATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source voltage and a maximum on-state resistance of 6.8 mΩ at 10 V gate drive. It supports a continuous drain current of 63 A at 25 °C case temperature and handles pulsed currents up to 252 A. The device features low gate charge (17 nC) and output charge (19 nC), optimized for high-performance synchronous rectification in switch-mode power supplies.

Feature Summary

Optimized for high-performance synchronous rectification applications
Superior thermal resistance characteristics
100% avalanche tested for enhanced ruggedness

Applications

Synchronous rectification in switch-mode power supplies

Procurement Notes

Verify the exact ordering code matches the required package variant PG-TSDSON-8 FL. Confirm that the component meets RoHS compliance and halogen-free requirements per IEC61249-2-21 standards. Ensure the application environment respects the specified operating temperature range and thermal derating curves provided in the datasheet.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(on) and robust avalanche capability is required. The TSDSON-8 FL package offers excellent thermal performance for space-constrained designs. Evaluate the total gate charge and output charge parameters against the target switching frequency and efficiency requirements.

Part Context

This part belongs to Infineon's OptiMOS family, specifically designed for power conversion applications. It utilizes advanced silicon technology to achieve low conduction losses while maintaining high reliability. The device is qualified according to JEDEC standards for target industrial applications.