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Product Detailed Parameters
- Description：MOSFET N-CH 60V 17A/40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8 FL
- Package / Case：8-PowerTDFN
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Overview
The BSZ0702LSATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage and a maximum on-state resistance of 4.0 mΩ at VGS=10 V. It supports a continuous drain current of 40 A and a pulsed current of 160 A. The device features a total gate charge of 18 nC, input capacitance of 2400 pF, and output capacitance of 500 pF. Thermal characteristics include a junction-to-case resistance of 1.1 K/W and a junction-to-ambient resistance of 60 K/W. It operates within a temperature range of -55 °C to 150 °C and utilizes a TSDSON-8 FL package.
Feature Summary
- Optimized for high-frequency switching in charger applications
- Logic-level operation suitable for low-voltage drive signals
- Superior thermal resistance for efficient heat dissipation
- 100% avalanche tested for enhanced ruggedness
Applications
- Charger designs
- Adapter circuits
- High-frequency switching applications
Procurement Notes
Verify the specific ordering code matches the required package variant. Confirm compliance with RoHS directives and halogen-free standards per IEC61249-2-21. Ensure the application environment aligns with the specified Standard Grade qualification limits. Cross-reference datasheet revision 2.1 for accurate electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when a 60 V rating and low RDS(on) are required for compact power stages. The TSDSON-8 FL package offers a small footprint ideal for space-constrained designs. Evaluate thermal management requirements against the 60 K/W junction-to-ambient resistance for natural convection cooling scenarios.
Part Context
This part belongs to Infineon's OptiMOS family, specifically designed for power delivery applications. It represents a silicon-based enhancement mode MOSFET technology optimized for efficiency and reliability in consumer electronics power supplies.
Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal performance characteristics.
