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Product Detailed Parameters
- Description：MOSFET N-CH 60V 40A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8-26
- Package / Case：8-PowerTDFN
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Overview
The BSZ0703LSATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It utilizes silicon technology and is housed in a TSDSON-8 surface-mount package. The device features a drain-source breakdown voltage of 80 V and supports a continuous drain current of 40 A at 25°C. Key electrical parameters include a maximum on-resistance of 7.4 mΩ, a gate charge of 14.1 nC, and a power dissipation rating of 69 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- OptiMOS 5 technology provides optimized performance for low-voltage applications.
- Enhanced ruggedness and high reliability suitable for demanding environments.
- Lead-free packaging compliant with RoHS standards.
Applications
- Power delivery systems
- Charger and adapter designs
- Point-of-load (POL) converters
Procurement Notes
Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required thermal and electrical ratings for the target application. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring an 80 V N-channel MOSFET with a 40 A current capacity. The 7.4 mΩ on-resistance makes it suitable for efficient power switching. Consider the TSDSON-8 package for compact board layouts. Verify that the operating voltage and current requirements do not exceed the specified absolute maximum ratings.
Part Context
This component is part of the BSZ series, specifically utilizing OptiMOS 5 technology. It is designed as a single-channel enhancement mode device. The product line targets general-purpose power switching needs where efficiency and size are critical factors.
Replacement Considerations
Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
