BSZ088N03LSGATMA1

$1.05

Description：MOSFET N-CH 30V 12A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:417f953e13b9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ088N03LSGATMA1

Overview

The BSZ088N03LSGATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 40 A. The device utilizes a TDSON-8 surface-mount package with 8 pins. Key electrical parameters include a maximum on-resistance of 7.3 mΩ, a gate charge of 23 nC at 4.5 V, and a power dissipation rating of 30 W. The component operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Optimized low-loss performance through advanced trench technology
Enhanced thermal stability for reliable operation in high-power applications
Designed for efficient switching with low gate charge characteristics

Applications

DC-DC converter circuits
Motor control systems
Power management modules

Procurement Notes

Verify the specific suffix 'GATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard TDSON-8 footprints during PCB layout. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for designs requiring robust 30 V N-channel switching capabilities. Evaluate the 7.3 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the TDSON-8 package limits. Confirm that the 40 A current rating aligns with peak load requirements.

Part Context

This part belongs to the OptiMOS 3 family, engineered for general-purpose power switching. It serves as a single-channel solution suitable for replacing older generation MOSFETs in compact power electronics. The TDSON-8 form factor supports automated surface-mount assembly processes.