BSZ088N03MSGATMA1

$0.72

Description：MOSFET N-CH 30V 11A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8e08f94bd718 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 11A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ088N03MSGATMA1

Overview

The BSZ088N03MSGATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a 30 V drain-source voltage rating and a continuous drain current of 40 A at case temperature (Tc) or 11 A at ambient temperature (Ta). The device offers a maximum on-resistance (Rds(on)) of 2.1 mΩ at Vgs = 4.5 V. It is housed in a surface-mount PG-TSDSON-8 package with a power dissipation capability of 2.1 W at Ta and 35 W at Tc.

Feature Summary

Optimized for 5 V driver applications including notebooks, VGA circuits, and Point-of-Load (POL) converters.
Designed for high-frequency Switching Mode Power Supplies (SMPS) with low Figure of Merit (FOMSW).
Features extremely low on-resistance to minimize conduction losses.

Applications

Notebook power management systems
VGA circuit drivers
Point-of-Load (POL) converter stages

Procurement Notes

Verify the component status as obsolete; this product is no longer manufactured by Infineon Technologies. Confirm availability through authorized distributors for remaining stock or consider qualified replacement parts for new designs. Ensure strict adherence to datasheet electrical limits during verification.

Selection Notes

Select this component for low-voltage, high-current switching applications requiring optimization for 5 V gate drive signals. The PG-TSDSON-8 package provides thermal efficiency for space-constrained designs. Evaluate thermal performance based on specific ambient versus case temperature operating conditions to ensure reliability within the specified power dissipation limits.

Part Context

This part belongs to the OptiMOS 3 series, which is engineered for low-side switching applications. The series emphasizes low Rds(on) and fast switching characteristics suitable for modern portable electronics and efficient power conversion topologies where drive voltage constraints exist.

Replacement Considerations

As the BSZ088N03MSGATMA1 is obsolete, verify equivalent N-channel 30 V MOSFETs in PG-TSDSON-8 packages with comparable Rds(on) and current ratings. Cross-reference pinouts and thermal characteristics to ensure compatibility with existing PCB layouts and thermal management solutions.