BSZ0901NSATMA1

$1.25

Description：MOSFET N-CH 30V 22A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b409cc74242c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 22A/40A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2850 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ0901NSATMA1

Overview

The BSZ0901NSATMA1 is an N-channel OptiMOS Power-MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 2 mΩ at VGS=10V and 2.6 mΩ at VGS=4.5V, supporting a continuous drain current of 145 A at TC=25°C. The device utilizes a PG-TSDSON-8 FL package with a thermal resistance (junction-to-case) of 1.8 K/W. Key dynamic parameters include a total gate charge of 23 nC at VGS=4.5V and a fall time of 4.8 ns.

Feature Summary

Optimized for high-performance Buck converters in server and VGA applications
Very low figure of merit Qoss for high-frequency switching power supplies
Excellent gate charge multiplied by RDS(on) product for efficiency
Superior thermal resistance characteristics

Applications

High-performance Buck converters
Server power supply designs
VGA power management circuits

Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm reel packaging requirements. Ensure the component matches the PG-TSDSON-8 FL package outline dimensions. Confirm RoHS compliance and halogen-free status against IEC61249-2-21 standards before integration into final assemblies.

Selection Notes

Select this component when low on-resistance at logic-level gate voltages is critical. The optimized FOMQOSS makes it suitable for high-frequency SMPS topologies. Evaluate the 145 A continuous current rating against actual thermal conditions and PCB cooling area constraints.

Part Context

This part belongs to Infineon's OptiMOS Power-MOSFET family designed for low-voltage, high-current applications. It is manufactured using silicon technology and qualified according to JEDEC standards for target automotive and industrial applications.